SKM450GB33F ? by semikron rev. 2.0 ? 02.05.2017 1 semitrans ? 20 gb SKM450GB33F features ?3.3 kv f-igbt ? 450a half bridge ?low v ce , e off and r th ? high power density ? low inductance module design ?t-sensor ? easy paralleling and easy power scaling ? for flexible and compact medium voltage inverters absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 3300 v i c t j = 150 c t c =25c 760 a t c =80c 542 a i cnom 450 a i crm i crm = 2xi cnom 900 a v ges -20 ... 20 v t psc v cc = 2200 v, l s =40nh, r gon =6.8 , r goff =68 , v ge 15, t j =150c, v ces 3300 10 s t j operation -50 ... 150 c inverse diode i f t j = 150 c t c =25c 674 a t c =80c 476 a i fnom 450 a i frm i frm = 2xi fnom 900 a i fsm t p = 10 ms, sin 180, t.b.d. a t j operation -50 ... 150 c module i t(rms) 1000 a t stg -55 ... 150 c v isol ac sinus 50 hz, t = 1 min 6000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =450a v ge =15v chiplevel t j =25c 1.75 2.07 2.37 v t j =150c 2.43 2.86 3.26 v v ge(th) v ce = 10v, i c =450ma, t j =25c 5.5 6.5 7.5 v i ces v ge =0v v ce = 3300 v t j =25c 0.3 ma t j =150c 15 50 ma c ies v ge =0v, v ce =10v, f=0.1mhz, t vj =25c 24.0 nf q g v ge = -15v ... 15v 1296 nc r gint t j =25c 6.2 t d(on) v cc = 1800 v i c =450a v ge = +15/-15 v r g on =6.8 r g off =12 di/dt on = 3500 a/s di/dt off =3400a/s du/dt = 1250 v/s l s =35nh t j =150c 326 ns t r t j =150c 118 ns e on t j =150c 601 mj t d(off) t j =150c 1180 ns t f t j =150c 291 ns e off t j =150c 601 mj r th(j-c) per igbt 0.035 k/w
SKM450GB33F 2 rev. 2.0 ? 02.05.2017 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f i f = 450 a v ge =0v chiplevel 1.75 2.05 2.34 v t j =150c 1.93 2.25 2.57 v i rrm i f = 450 a di/dt off =3600a/s v ge =15v v cc = 1800 v l s =35nh t j =150c 493 a q rr t j =150c 442 c e rr t j =150c 542 mj t rr t j =150c 1.49 s r th(j-c) per diode 0.055 k/w module l ce between c 1 (main) and e 2 (main) 9 nh r cc'+ee' measured per switch, r c aux c + r e aux e t c =25c t.b.d. m t c =125c 0.44 m r th(c-s) per switch 0.02 k/w m s to heat sink m6 5.5 6 nm m t to terminals m3 0.6 0.8 nm to terminals m8 14.4 15 nm temperature sensor r 25 t c = 25c 5 5% k b 25/50 3375 k semitrans ? 20 gb SKM450GB33F features ?3.3 kv f-igbt ? 450a half bridge ?low v ce , e off and r th ? high power density ? low inductance module design ?t-sensor ? easy paralleling and easy power scaling ? for flexible and compact medium voltage inverters
SKM450GB33F ? by semikron rev. 2.0 ? 02.05.2017 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 6: typ. gate charge characteristic fig. 7: typ. switching times = f (i c )
SKM450GB33F 4 rev. 2.0 ? 02.05.2017 ? by semikron fig. 8: typ. switching times = f (r g ) fig. 9: transient thermal impedance fig. 10: typ. diode forward charact., incl. r cc'+ ee' fig. 11: typ. diode peak reverse recovery current fig. 12: typ. diode peak reverse recovery charge
SKM450GB33F ? by semikron rev. 2.0 ? 02.05.2017 5 semitrans 20 gb
SKM450GB33F 6 rev. 2.0 ? 02.05.2017 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes.
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